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本期继续对上海交通大学版《材料科学基础》第3章内容：晶体缺陷，实际晶体结构中的位错进行讲解。 01实际晶体结构中的位错相对于简单立方点阵，实际金属晶体结构中的位错更加复杂。 相对于全位错存在不全位错。 全… The evolution equations approximately account for most known dislocation storage, dynamic recovery, and dislocation generation mechanisms in fcc polycrystals. 在FCC（面心立方）晶体中，ISF（本征堆垛层错，Intrinsic Stacking Fault）、ESF（外禀堆垛层错，Extrinsic Stacking Fault）以及twin（孪晶）转变是材料科学中重要的概念，它们的形成通常与晶体生长过程中的原子扩散、堆垛错误或变形过程中的滑移和孪生有关。
肖克莱不全位错是面心立方（FCC）晶体中特有的线缺陷类型，其柏氏矢量值为1/6类型，属于不完全位错范畴。 该位错形成于全位错分解过程中，通过滑移机制在 {111}晶面上扩展为两个肖克莱不全位错夹持层错区的结构。 An analytic model of the evolution of dislocation density in fcc polycrystals is described 本文介绍了FCC结构金属材料中孪晶的结构及形核方式;综述了目前人们在位错与孪晶界交互作用原子机理研究中的主要进展;总结了孪晶界对位错的阻碍、吸收、相互反应等作用机制。
本期继续对 上海交通大学版《材料科学基础》第3章内容：晶体缺陷，位错运动进行讲解。 《材料科学基础》中晶体缺陷一章一直是考研的重点，这一章节内容比较抽象复杂，属于比较难理解和掌握的章节。
现实生活中不可能存在完美的晶体结构，必然会存在缺陷，位错作为线缺陷的一种，对材料的各方面性能和析出相的形成有着巨大的影响。 因此对位错的研究是材料研究中的重要一部分。 位错的观察常用方法有：金相观察法，X射线衍射法和透射电子显微镜观察。 （a）变形孪晶尖端的应力集中；（b）位错孪晶交叉形成的台阶处的应变场；（c）伪孪晶形成引起的晶格畸变；（d）变形孪晶的纳米结构，包括位错和纳米孪晶带 原子机理研究中的主要进展ꎻ总结了孪晶界对位错的阻碍、吸收、相互反应等作用机制ꎮ 为进一步深入研究位错与 基体间有一个非共格的界面ꎮ 图 1e 展示的是 FCC
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